| PART |
Description |
Maker |
| HMD4M32M2EG-5 HMD4M32M2EG-6 |
16Mbyte(4Mx32) 72-pin SIMM EDO Mode, 4K Refresh, 5V
|
Hanbit Electronics Co.,Ltd.
|
| HMD8M32M16EBG HMD8M32M16EBG-5 HMD8M32M16EBG-6 |
32Mbyte(8Mx32) 72-pin EDO MODE 2K Ref. SIMM Design 5V
|
Hanbit Electronics Co.,Ltd
|
| KMM5362205C2W |
2MBx36 DRAM Simm Using 1MBx16 And 4MB Quad Cas Edo
|
Samsung Semiconductor
|
| KMM5361205C2W |
1MBx36 DRAM Simm Using 1MBx16 And 4MB Quad Cas Edo
|
Samsung Semiconductor
|
| HYM64VX005GCL-60 HYM64VX005GCD-60 HYM64V2005GCD-60 |
2M X 64 EDO DRAM MODULE, 60 ns, ZMA144
4M X 64 EDO DRAM MODULE, 60 ns, ZMA144
144 pin SO-DIMM EDO-DRAM Modules 8MB , 16MB, 32MB & 64MB density
2M x 64 Bit EDO DRAM Module (SO-DIMM)...
4M x 64 Bit EDO DRAM Module (SO-DIMM)...
|
INFINEON TECHNOLOGIES AG
|
| HMS2M32Z16V HMS2M32M16V |
SRAM MODULE 8Mbyte (2M x 32-Bit), 3.3V 72-Pin SIMM Design
|
Hanbit Electronics Co.,Ltd
|
| HMD4M32M2G-5 HMD4M32M2G-6 HMD4M32M2G |
16Mbyte(4Mx32) 72-pin SIMM Fast Page Mode, 4K Refresh, 5V
|
Hanbit Electronics Co.,Ltd
|
| HMS51232Z4L-10 HMS51232Z4L-12 HMS51232Z4L-15 HMS51 |
SRAM MODULE 2Mbyte (512K x 32-Bit), LOW POWER, 72-Pin SIMM 5V
|
Hanbit Electronics Co.,Ltd
|
| HMD16M32M8G HMD16M32M8G-5 HMD16M32M8G-6 |
64Mbyte(16Mx32) 72-pin FP Mode 4K Ref. SIMM Design 5V 64Mbyte6Mx322针计划生育模K的参考。上海药物研究所设计5V
|
Hanbit Electronics Co.,Ltd.
Hanbit Electronics Co., Ltd.
|
| HYB314175BJ-50- HYB314175BJL-50 HYB314175BJ-60 HYB |
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 3.3V56亩16位江户的DRAM 3.3V56亩16位江户与DRAM的低功率版本自刷
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16外延式数据输出（EDO)动态RAM)
|
http://
SIEMENS AG
|
| HSD32M32M4V-F10 HSD32M32M4V-F10L HSD32M32M4V-F12 H |
Synchronous DRAM Module 128Mbyte ( 32M x 32-Bit ) 72-Pin SIMM based on 32Mx8, 4Banks, 8K Ref., 3.3V
|
Hanbit Electronics Co.,Ltd
|
